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Proceedings Paper

Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications
Author(s): Ashok K. Sood; Rajwinder Singh; Yash R. Puri; Frederick W. Clarke; Oleg Laboutin; Paul M Deluca; Roger E. Wesler; Jie Deng; James C. M. Hwang
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Paper Abstract

GaN /AlGaN transistors are being developed for a variety of RF electronic devices that will eventually replace GaAs- and silicon-based devices for commercial and military applications. In this paper, we present results from the optimization of the growth conditions for GaN/AlGaN HEMT structures. The HEMT epitaxial layers are grown via MOCVD. We demonstrate that the key to high quality HEMT structures is the ability to grow uniform AlGaN layers. Details of the structural, electrical and optical characteristics of the HEMT epitaxial layers are presented. In addition, we present results on an innovative ICP etching used for HEMT fabrication. This technique allows for low damage device processing and improved reliability.

Paper Details

Date Published: 3 March 2006
PDF: 13 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210D (3 March 2006); doi: 10.1117/12.651122
Show Author Affiliations
Ashok K. Sood, Magnolia Optical Technologies, Inc. (United States)
Rajwinder Singh, Magnolia Optical Technologies, Inc. (United States)
Yash R. Puri, Magnolia Optical Technologies, Inc. (United States)
Frederick W. Clarke, U.S. Army Space and Missile Defense Command (United States)
Oleg Laboutin, Kopin Corp. (United States)
Paul M Deluca, Kopin Corp. (United States)
Roger E. Wesler, Kopin Corp. (United States)
Jie Deng, Lehigh Univ. (United States)
James C. M. Hwang, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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