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Proceedings Paper

Specific contact resistivity of Al-NiSi contacts using Cross Kelvin Resistor test structure chains
Author(s): Anthony S. Holland; Madhu Bhaskaran; Sharath Sriram; Geoffrey K. Reeves; Vykundh Ravichandran; Vishal Dodhu Borase; Shreekkanth Bhaskaran
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Paper Abstract

Silicide contacts are used in semiconductor devices because of their relatively low sheet resistance as thin films and because they form contacts with relatively low values of specific contact resistivity leading overall to low values of contact resistance. Determining the true values of the specific contact resistivity of metal-to-silicide interfaces is a challenge that requires suitable test structures. The Cross Kelvin Resistor (CKR) structure is a commonly used test structure for the extraction of the specific contact resistance of ohmic contacts. Analysis using this structure has errors associated with it and the challenge is often in determining this error. This paper demonstrates a technique that uses several Cross Kelvin Resistor structures connected in a chain and determines the specific contact resistance of aluminium to nickel silicide contacts using extrapolation rather than determining the error. The formation of the nickel silicide films and the fabrication and testing results for the Cross Kelvin Resistor structures are presented.

Paper Details

Date Published: 5 January 2006
PDF: 9 pages
Proc. SPIE 6035, Microelectronics: Design, Technology, and Packaging II, 60350X (5 January 2006); doi: 10.1117/12.650699
Show Author Affiliations
Anthony S. Holland, RMIT Univ. (Australia)
Madhu Bhaskaran, RMIT Univ. (Australia)
Sharath Sriram, RMIT Univ. (Australia)
Geoffrey K. Reeves, RMIT Univ. (Australia)
Vykundh Ravichandran, RMIT Univ. (Australia)
Vishal Dodhu Borase, RMIT Univ. (Australia)
Shreekkanth Bhaskaran, RMIT Univ. (Australia)

Published in SPIE Proceedings Vol. 6035:
Microelectronics: Design, Technology, and Packaging II
Alex J. Hariz, Editor(s)

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