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Proceedings Paper

Observation of crystallization in amorphous phase change films induced by femtosecond laser pulses
Author(s): Guangjun Zhang; Donghong Gu; Xiongwei Jiang; Qingxi Chen; Fuxi Gan
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Paper Abstract

Crystallization was induced in amorphous Ge2Sb2Te5 and AgInSbTe films by femtosecond laser with an average power of 20mW at a frequency of 1 kHz and a pulsed width of 120 fs. Transmission electron microscopy observes the morphology of Ge2Sb2Te5 and AgInSbTe films before and after irradiation of femtosecond laser pulses and confirms the existence of crystalline state.

Paper Details

Date Published: 15 September 2005
PDF: 4 pages
Proc. SPIE 5966, Seventh International Symposium on Optical Storage (ISOS 2005), 59661D (15 September 2005); doi: 10.1117/12.649663
Show Author Affiliations
Guangjun Zhang, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (China)
Donghong Gu, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (China)
Xiongwei Jiang, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (China)
Qingxi Chen, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (China)
Fuxi Gan, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 5966:
Seventh International Symposium on Optical Storage (ISOS 2005)
Fuxi Gan; Lisong Hou, Editor(s)

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