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Proceedings Paper

4-level run-length limited optical storage on photo-chromic materials
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Paper Abstract

4-Level Run-Length Limited (4L-RLL) optical storage based on photo-chromic materials is firstly investigated in this paper to our knowledge. Unlike binary recording, information in Multi-Level Run-Length Limited (ML-RLL) modulation system is carried in both the amplitude and length of the marks. ML-RLL optical storage can increase the recording density and data transfer rate with no changes to the optical/mechanical unit. For photo-chromic materials, different levels of input laser power amplitude give rise to different reflection levels. Using optimal write strategies, a 4 level linear playback signal was obtained and the sigma-to-dynamic range (SDR) of the 4-level signal was calculated. The results show that the SDR is low enough to provide low bits error rate (BER).

Paper Details

Date Published: 15 September 2005
PDF: 4 pages
Proc. SPIE 5966, Seventh International Symposium on Optical Storage (ISOS 2005), 59660Y (15 September 2005); doi: 10.1117/12.649644
Show Author Affiliations
Heng Hu, Tsinghua Univ. (China)
Longfa Pan, Tsinghua Univ. (China)
Hua Hu, Tsinghua Univ. (China)
Duanyi Xu, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 5966:
Seventh International Symposium on Optical Storage (ISOS 2005)
Fuxi Gan; Lisong Hou, Editor(s)

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