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Proceedings Paper

Photo- and current-induced crystallization of optical and electrical memory in phase change materials
Author(s): Masahiro Okuda; Hirokazu Inaba; Shouji Usuda
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Paper Abstract

On the excess Sb effect for the dynamics of rapid crystallization in eutectic amorphous films, the crystallization is described by the propagation of crystalline region with high velocity in the interface separating the crystalline and amorphous phase for InSb and AgInSbTe materials. From this analysis, it is clear that the crystallization is grown up in the boundary of crystalline-amorphous region of eutectic materials, which is different from the pseudo-binary compound GeSbTe media. Similarly, the current-induced crystallization can be investigated by the electron- phonon interaction. If a certain fraction of the valence band electrons are excited into the conduction band, the reaction of TA phonon take the stability of the crystal.

Paper Details

Date Published: 15 September 2005
PDF: 8 pages
Proc. SPIE 5966, Seventh International Symposium on Optical Storage (ISOS 2005), 596606 (15 September 2005); doi: 10.1117/12.649597
Show Author Affiliations
Masahiro Okuda, Okuda Technical Office (Japan)
Hirokazu Inaba, Osaka Prefecture Univ. (Japan)
Shouji Usuda, Osaka Prefectural College of Technology (Japan)


Published in SPIE Proceedings Vol. 5966:
Seventh International Symposium on Optical Storage (ISOS 2005)
Fuxi Gan; Lisong Hou, Editor(s)

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