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Proceedings Paper

SiO2 etching for optical device using pulse-modulated electron-beam-excited plasma
Author(s): Takayuki Ohta; Masafumi Ito; Keigo Takeda; Masaru Hori
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Paper Abstract

In the micro-machining process for fabricating optical devices, the fast atomic-beam etching (FABE) or the ion-beam etching (IBE) is used. However, the etch rates of these processes are typically around a few tens nm/min, so the higher etch-rate is strongly required to reduce the processing time. We investigated an etching process of a silicon-dioxide (SiO2) using an electron-beam-excited plasma (EBEP) to realize a novel micro-machining process without any bias-power supply. The EBEP has an excellent potential for applying self-bias to the non-planar thick dielectric materials with the high-density electron beam. In the direct current (DC)-EBEP, the non-uniformity of etching and the thermal damage to photo-resist were observed. To overcome these problems, we have developed a pulse-modulated EBEP, and thus the non-uniformity of etching and the thermal damage were improved. Moreover, the maximum etch-rate of 450 nm/min was obtained and an anisotropy etching was realized. An optical fiber as a non-planar material was etched to demonstrate the application of this process. The clad area was etched for fabricating a core lens. We have found that the pulse-time-modulated EBEP has an excellent potential to realize micro-fabrications of optical fibers with the etch rate several times higher than that of the conventional FABE and IBE processes.

Paper Details

Date Published: 5 December 2005
PDF: 9 pages
Proc. SPIE 6050, Optomechatronic Micro/Nano Devices and Components, 60500W (5 December 2005); doi: 10.1117/12.648628
Show Author Affiliations
Takayuki Ohta, Wakayama Univ. (Japan)
Masafumi Ito, Wakayama Univ. (Japan)
Keigo Takeda, Nagoya Univ. (Japan)
Masaru Hori, Nagoya Univ. (Japan)

Published in SPIE Proceedings Vol. 6050:
Optomechatronic Micro/Nano Devices and Components
Yoshitada Katagiri, Editor(s)

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