Share Email Print
cover

Proceedings Paper

Wafer bonding between InP and Ce:YIG(CeY2Fe5O12) using O2 plasma surface activation for an integrated optical waveguide isolator
Author(s): J. W. Roh; J. S. Yang; S. H. Ok; D. H. Woo; Y. T. Byun; Y. M. Jhon; T. Mizumoto; W. Y. Lee; S. Lee
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The wafer bonding of III-V semiconductor materials with garnet thin films has become of increasing technological importance in integration of optical components. The wafer bonding between InP wafer and GGG was demonstrated by using O2 plasma surface activation. The same process was applied to the bonding process of InP/Ce:YIG, which is indispensable for the fabrication of an integrated optical waveguide isolator.

Paper Details

Date Published: 24 February 2006
PDF: 8 pages
Proc. SPIE 6123, Integrated Optics: Devices, Materials, and Technologies X, 612316 (24 February 2006); doi: 10.1117/12.648371
Show Author Affiliations
J. W. Roh, Korea Institute of Science and Technology (South Korea)
Yonsei Univ. (South Korea)
J. S. Yang, Yonsei Univ. (South Korea)
S. H. Ok, Korea Institute of Science and Technology (South Korea)
D. H. Woo, Korea Institute of Science and Technology (South Korea)
Y. T. Byun, Korea Institute of Science and Technology (South Korea)
Y. M. Jhon, Korea Institute of Science and Technology (South Korea)
T. Mizumoto, Tokyo Institute of Technology (Japan)
W. Y. Lee, Yonsei Univ. (South Korea)
S. Lee, Korea Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 6123:
Integrated Optics: Devices, Materials, and Technologies X
Yakov Sidorin; Christoph A. Waechter, Editor(s)

© SPIE. Terms of Use
Back to Top