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Proceedings Paper

Spectral properties of all-active InP-based microring resonator devices
Author(s): A. Kapsalis; D. Alexandropoulos; S. Mikroulis; H. Simos; I. Stamataki; D. Syvridis; M. Hamacher; U. Troppenz; H. Heidrich
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Paper Abstract

Microring resonators are excellent candidates for very large scale photonic integration due to their compactness, and fabrication simplicity. Moreover a wide range of all-optical signal processing functions can be realized due to the resonance effect. Possible applications include filtering, add/drop of optical beams and power switching, as well as more complex procedures including multiplexing, wavelength conversion, and logic operations. All-active ring components based in InGaAsP/InP are possible candidates for laser sources, lossless filters, wavelength converters, etc. Our work is based on measurement, characterization and proposal of possible exploitation of such devices in a variety of applications. We investigate the spectral characteristics of multi-quantum well InGaAsP(λ=1.55μm)/InP microring structures of various ring diameters and different configurations including racetracks with one or two bus waveguides and MMI couplers. The latter configuration has recently exhibited the possibility to obtain tunable active filters as well as tunable laser sources based on all-active ring-bus-coupler structures. In the case of tunable lasers single mode operation has been achieved by obtaining sufficiently high side mode suppression ratio. The tuning capability is attributed to a coupled cavities effect, resembling the case of multi-section DBR lasers. However, in contrast to the latter, the fabrication of microring resonators is considered an easier task, due to a single step growth procedure, although further investigation must be carried out in order to achieve wide range tunability. Detailed mappings of achievable wavelengths are produced for a wide range of injection current values.

Paper Details

Date Published: 28 February 2006
PDF: 9 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611523 (28 February 2006); doi: 10.1117/12.647992
Show Author Affiliations
A. Kapsalis, National and Kapodistrian Univ. of Athens (Greece)
D. Alexandropoulos, National and Kapodistrian Univ. of Athens (Greece)
S. Mikroulis, National and Kapodistrian Univ. of Athens (Greece)
H. Simos, National and Kapodistrian Univ. of Athens (Greece)
I. Stamataki, National and Kapodistrian Univ. of Athens (Greece)
D. Syvridis, National and Kapodistrian Univ. of Athens (Greece)
M. Hamacher, Fraunhofer-Institute for Telecommunications, Heinrich-Hertz-Institute (Germany)
U. Troppenz, Fraunhofer-Institute for Telecommunications, Heinrich-Hertz-Institute (Germany)
H. Heidrich, Fraunhofer-Institute for Telecommunications, Heinrich-Hertz-Institute (Germany)

Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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