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Proceedings Paper

Annealing dynamics of As ion-implanted GaAs: AsGa antisite defect model
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Paper Abstract

We determined the annealing dynamics of AsGa antisite defects in As ion-implanted GaAs based on a model where AsGa antisite defects trap photo-excited carriers. An Arrhenius plot of the carrier decay rate vs. annealing temperature in the high temperature regime gave an energy EPA, which was different from true activation energy. The annealing time dependence of EPA obtained by the two diffusion models (self diffusion and VGa vacancy assisted diffusion of defects) were compared with EPA's obtained form already published works, which proved that the density of VGa vacancy was high enough to assist the diffusion of AsGa antisite defects and that the annealing dynamics of AsGa antisite defects was VGa vacancy assisted diffusion.

Paper Details

Date Published: 6 December 2005
PDF: 8 pages
Proc. SPIE 6050, Optomechatronic Micro/Nano Devices and Components, 605011 (6 December 2005); doi: 10.1117/12.647725
Show Author Affiliations
Ryuzi Yano, Muroran Institute of Technology (Japan)
Hiroyuki Shinojima, NTT Corp. (Japan)


Published in SPIE Proceedings Vol. 6050:
Optomechatronic Micro/Nano Devices and Components
Yoshitada Katagiri, Editor(s)

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