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Proceedings Paper

GaN light-emitting triodes for high-efficiency hole injection and light emission
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Paper Abstract

Experimental results on a new type of light-emitting device, the light-emitting triode (LET), are presented. The LET is a three-terminal p-n junction device that accelerates carriers in the lateral direction, i.e. parallel to the p-n junction plane, by means of an electric field between two anodes. The lateral field provides additional energy to carriers thereby allowing them to overcome barriers and increasing the carrier injection efficiency into the active region. LETs were fabricated using a ultraviolet LED structure that has an AlGaN/GaN superlattice in the p-type confinement region for high-conductivity 2 dimensional hole gas. LET mesa structures were obtained by standard photolithographic patterning followed by chemically-assisted ion-beam etching using Cl2 and Ar to expose the n-type cladding layer. The n-type contact was fabricated by electron-beam evaporation of Ti/Al/Ni/Au. Ni/Au (50/50 Å) metallization was deposited for both anodes, Anode 1 and Anode 2, and subsequently annealed at 500 oC in an O2 ambient. It is shown that both the current between Anode 1 and the cathode, and the light-output power increase with increasing negative bias to the Anode 2. This is consistent with the expectation that a negative bias to the second anode allows carriers to acquire a high kinetic energy thereby enabling them to overcome the barrier for holes, resulting in high injection efficiency into the active region that lies beyond the barrier.

Paper Details

Date Published: 22 February 2006
PDF: 8 pages
Proc. SPIE 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X, 61340K (22 February 2006); doi: 10.1117/12.647453
Show Author Affiliations
Jong Kyu Kim, Rensselaer Polytechnic Institute (United States)
J.-Q. Xi, Rensselaer Polytechnic Institute (United States)
Hong Luo, Rensselaer Polytechnic Institute (United States)
Jaehee Cho, Samsung Advanced Institute of Technology (South Korea)
Cheolsoo Sone, Samsung Advanced Institute of Technology (South Korea)
Yongjo Park, Samsung Advanced Institute of Technology (South Korea)
Thomas Gessmann, Rensselaer Polytechnic Institute (United States)
J. M. Zavada, U.S. Army Research Office (United States)
H. X. Jiang, Kansas State Univ. (United States)
E. Fred Schubert, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 6134:
Light-Emitting Diodes: Research, Manufacturing, and Applications X
Klaus P. Streubel; H. Walter Yao; E. Fred Schubert, Editor(s)

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