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Proceedings Paper

Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes
Author(s): Jung-Hye Chae; Han-Youl Ryu; Kyu-Sang Kim; Kyoung-Ho Ha; Suhee Chae; Hyungkun Kim; Sung-Nam Lee; Kwang-Ki Choi; Taehoon Jang; Joong-Kon Son; Ho-Sun Baek; Youn-Joon Sung; Sakong Tan; Younhee Kim; Ok-Hyun Nam; Yong-Jo Park
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Paper Abstract

The enhanced output power with improved lifetime is required for the GaN-based blue-violet laser diode (LD) as a light source for Blu-ray Disc or HD-DVD. In this paper, the output power levels and aging behaviors in GaN-based LDs grown on sapphire substrates were compared in epi-up and epi-down bonding. At low current level, the two bondings show little differences in L-I characteristics. At high current level, however, the epi-up bonding shows a rapidly decreased slope efficiency in L-I characteristics with increasing current injection. On the contrary, the slope efficiency in epi-down bonding is not so much deteriorating as that in epi-up bonding. The differences in junction temperature between epi-up and epi-down bonding are large at higher current levels. The junction temperature of epi-up bonding is about two times higher than that of epi-down bonding, implying efficient heat dissipation in epi-down bonding. At aging test, the epi-down bonding LD shows lower degradation rate at the aging slope than that of epi-up bonding LD. The degradation rate is accelerated by poor heat dissipation in epi-up bonding. Thus, for the higher power and longer lifetime, it is necessary to employ efficient heat dissipation structures such as epi-down bonding for the GaN-based LD on sapphire substrate.

Paper Details

Date Published: 3 March 2006
PDF: 5 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210Y (3 March 2006); doi: 10.1117/12.647332
Show Author Affiliations
Jung-Hye Chae, SAMSUNG Advanced Institute of Technology (South Korea)
Han-Youl Ryu, SAMSUNG Advanced Institute of Technology (South Korea)
Kyu-Sang Kim, SAMSUNG Advanced Institute of Technology (South Korea)
Kyoung-Ho Ha, SAMSUNG Advanced Institute of Technology (South Korea)
Suhee Chae, SAMSUNG Advanced Institute of Technology (South Korea)
Hyungkun Kim, SAMSUNG Advanced Institute of Technology (South Korea)
Sung-Nam Lee, SAMSUNG Advanced Institute of Technology (South Korea)
Kwang-Ki Choi, SAMSUNG Advanced Institute of Technology (South Korea)
Taehoon Jang, SAMSUNG Advanced Institute of Technology (South Korea)
Joong-Kon Son, SAMSUNG Advanced Institute of Technology (South Korea)
Ho-Sun Baek, SAMSUNG Advanced Institute of Technology (South Korea)
Youn-Joon Sung, SAMSUNG Advanced Institute of Technology (South Korea)
Sakong Tan, SAMSUNG Advanced Institute of Technology (South Korea)
Younhee Kim, SAMSUNG Advanced Institute of Technology (South Korea)
Ok-Hyun Nam, SAMSUNG Advanced Institute of Technology (South Korea)
Yong-Jo Park, SAMSUNG Advanced Institute of Technology (South Korea)


Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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