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Proceedings Paper

Fabrication and characterization of AlGaAs/GaAs multiquantum well ring lasers
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Paper Abstract

In this paper, we present the design, fabrication, and characterization of large-diameter semiconductor ring lasers with a single out coupling waveguide using AlGaAs/GaAs multiquantum well wafer. We also investigate the influence of the coupling between the ring cavity and the straight waveguide on the threshold current. It was found that the threshold current reduces with the decrease of the coupling between the ring cavity and the waveguide due to the widening of the coupling gap. By optimizing the coupling gap, we achieve a device with the threshold current of as low as 49mA.

Paper Details

Date Published: 24 February 2006
PDF: 6 pages
Proc. SPIE 6123, Integrated Optics: Devices, Materials, and Technologies X, 61230Z (24 February 2006); doi: 10.1117/12.647210
Show Author Affiliations
Binglin Miao, Univ. of Delaware (United States)
Shouyuan Shi, Univ. of Delaware (United States)
Janusz Murakowski, Univ. of Delaware (United States)
Caihua Chen, Univ. of Delaware (United States)
Dennis W. Prather, Univ. of Delaware (United States)


Published in SPIE Proceedings Vol. 6123:
Integrated Optics: Devices, Materials, and Technologies X
Yakov Sidorin; Christoph A. Waechter, Editor(s)

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