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Proceedings Paper

Cathodoluminescence study of GaN and GaN:Si on sapphire
Author(s): Nicolas Pauc; Matthew Phillips; Vincent Aimez; Dominique Drouin
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Paper Abstract

We present a luminescence study of as-grown GaN and GaN:Si samples by means of low voltage cathodoluminescence (CL) at low temperature. It is shown that high spatial resolution CL microscopy allows direct luminescence mapping of threading dislocations in the doped and undoped samples. Comparison of monochromatic CL images acquired near the band gap energy (free and bound excitons) and at lower energies (recombination on defects) reveal the dopant segregation around dislocations.

Paper Details

Date Published: 3 March 2006
PDF: 8 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210A (3 March 2006); doi: 10.1117/12.646837
Show Author Affiliations
Nicolas Pauc, Univ. de Sherbrooke (Canada)
Matthew Phillips, Univ. of Technology, Sydney (Australia)
Vincent Aimez, Univ. de Sherbrooke (Canada)
Dominique Drouin, Univ. de Sherbrooke (Canada)

Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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