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Proceedings Paper

Etched facet technology for GaN and blue lasers
Author(s): Alex Behfar; Alfred Schremer; Jeff Hwang; Cristian Stagarescu; Alan Morrow; Malcolm Green
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Paper Abstract

In the late 1980's, etched facet lasers were demonstrated at Cornell University using a process based on chemically assisted ion beam etching (CAIBE). These etched facets allowed, for the first time, mirror reflectivities to be obtained that were equal to those of cleaved facets. Over the past few years, BinOptics Corporation has used this proprietary Etched Facet Technology (EFT) in fabricating InP based lasers with a quality equal to those of cleaved facets. Etched facets allow mirrors to be placed on the epitaxial substrate with very high precision. EFT eliminates losses that result from mechanical facet cleaving, allows wafer-scale testing and coating, and enables monolithic integration. BinOptics Corporation has now developed a modified version of its EFT for GaN materials and blue lasers where mechanical cleaving losses can be even more problematic. The relatively high defect density of currently available GaN materials creates an additional yield advantage for EFT: it allows the formation of shorter cavity devices with fewer defects per device. The first etched facet GaN devices are Fabry-Perot type ridge waveguide lasers emitting at 405nm for optical storage applications. However, as demonstrated in InP, it is planned to extend the technology to horizontal-cavity surface-emitting lasers (HCSELs) with integrated monitoring photodetectors (MPDs). A surface-emitting blue laser will allow two-dimensional arrays for high power applications and monolithic integration of additional functions. For example, the integration of a blue HCSEL with a receive detector will enable the creation of a compact optical head.

Paper Details

Date Published: 3 March 2006
PDF: 8 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210P (3 March 2006); doi: 10.1117/12.646629
Show Author Affiliations
Alex Behfar, BinOptics Corp. (United States)
Alfred Schremer, BinOptics Corp. (United States)
Jeff Hwang, BinOptics Corp. (United States)
Cristian Stagarescu, BinOptics Corp. (United States)
Alan Morrow, BinOptics Corp. (United States)
Malcolm Green, BinOptics Corp. (United States)

Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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