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Proceedings Paper

Fabrication of 3D photonic crystals by two-step dry etching of layered media
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Paper Abstract

Photonic crystals have received growing interest over the past decade on account of their excellent functionality to guiding and manipulating electromagnetic radiation and their diverse applications. Our approach to fabricate crystals is by a two step etching process in a semiconductor hetero-structure of gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs) grown using molecular beam epitaxy (MBE). An array of holes was dry etched in Cl2/Ar inductively coupled plasma. Etching selectivity between the mask and the substrate was 10:1.2 By using SF6 in addition to the boron-tri-chloride (BCl3) chemistry, the GaAs is etched selectively over the AlGaAs with selectivities over 5:1. Thus a robust two-step etching process has been developed based entirely on dry etching

Paper Details

Date Published: 23 January 2006
PDF: 8 pages
Proc. SPIE 6110, Micromachining Technology for Micro-Optics and Nano-Optics IV, 611006 (23 January 2006); doi: 10.1117/12.646461
Show Author Affiliations
Pradeep Srinivasan, College of Optics and Photonics, CREOL, Univ. of Central Florida (United States)
Raymond C. Rumpf, College of Optics and Photonics, CREOL, Univ. of Central Florida (United States)
Eric G. Johnson, College of Optics and Photonics, CREOL, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 6110:
Micromachining Technology for Micro-Optics and Nano-Optics IV
Eric G. Johnson; Gregory P. Nordin; Thomas J. Suleski, Editor(s)

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