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Proceedings Paper

Analysis of a surface-normal coupled-quantum-well modulator at 1.55 um
Author(s): Z. Q. Li; Alfred K. M. Lam; Z. Simon Li
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Paper Abstract

We report on the design and analysis of a surface-normal coupled-quantum-well (CQW) electro-absorption modulator (EAM) using a simulation software APSYS. The modulator is designed as a p-i-n diode operating at 1.55 um, in which the CQW structure is composed of InGaAs-InAlAs. In this paper, detailed analysis of the internal device physics is investigated, which includes the transition energy and the square of the normalized overlap integrals between confined energy levels for electrons and holes. This analysis reveals the mechanisms in the device that are responsible for the redshift of the absorption spectra for achieving an operating wavelength at 1.55 um, which, in turn, provides researchers with insight in the high performance modulators design. The analysis also explains the dependence of the absorption spectra on wavelength and bias voltage. The simulation model self-consistently solves for wavefunctions and the corresponding quantum states energies and then used for absorption spectra calculations within the 2D/3D drift-diffusion framework.

Paper Details

Date Published: 28 February 2006
PDF: 8 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611508 (28 February 2006); doi: 10.1117/12.646385
Show Author Affiliations
Z. Q. Li, Crosslight Software Inc. (Canada)
Alfred K. M. Lam, Crosslight Software Inc. (Canada)
Z. Simon Li, Crosslight Software Inc. (Canada)


Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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