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Proceedings Paper

High-power high-brightness tapered lasers with an Al-free active region at 915 nm
Author(s): N. Michel; I. Hassiaoui; M. Lecomte; O. Parillaud; M. Calligaro; M. Krakowski
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Paper Abstract

We have developed high power and high brightness tapered lasers based on an Al-free active region at 915 nm. The material structure, which was grown by MOCVD (Metallorganic Chemical Vapor Deposition), has very low internal losses of 0.5 cm-1, a very low transparency current density of 86 A/cm2, a high internal quantum efficiency of 86%, and a high characteristic temperature T0 of 171 K. Based on these good results, we have realised index-guided tapered lasers (IG1) with a narrow output width of a few tens of microns, a narrow taper angle of less than 1o, which deliver 1 W CW, together with an M2 beam quality parameter of 3.0, and a divergence angle in the slow axis of 6o FWHM and 10.2o at 1/e2. We have also realised a small array of six IG1 lasers, which delivers 4 W CW, together with a divergence angle of 5.6o FWHM and 10.2o at 1/e2. Clarinet lasers were also fabricated. These devices were recently proposed to achieve high brightness together with a very narrow divergence angle, which is stable with current. These index-guided tapered lasers have also a narrow output width, but a larger taper angle of 2o. The Clarinet lasers at 915 nm deliver 0.65 W CW, together with an M2 beam quality factor of less than 1.5 at 1/e2, and a very narrow divergence angle of 2.6o FWHM, and 4.8o at 1/e2.

Paper Details

Date Published: 22 February 2006
PDF: 10 pages
Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330E (22 February 2006); doi: 10.1117/12.646379
Show Author Affiliations
N. Michel, Alcatel-Thales III-V Lab. (France)
I. Hassiaoui, Alcatel-Thales III-V Lab. (France)
M. Lecomte, Alcatel-Thales III-V Lab. (France)
O. Parillaud, Alcatel-Thales III-V Lab. (France)
M. Calligaro, Alcatel-Thales III-V Lab. (France)
M. Krakowski, Alcatel-Thales III-V Lab. (France)

Published in SPIE Proceedings Vol. 6133:
Novel In-Plane Semiconductor Lasers V
Carmen Mermelstein; David P. Bour, Editor(s)

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