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Proceedings Paper

Differential luminescence thermometry in semiconductor laser cooling
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Paper Abstract

We demonstrate a non-contact, spectroscopic technique to measure the temperature change of semiconductors with very high precision. A temperature resolution of less than 100 μK has been obtained with bulk GaAs. This scheme finds application in experiments to study laser cooling of solids. We measure a record external quantum efficiency of 99% for a GaAs device.

Paper Details

Date Published: 28 February 2006
PDF: 6 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151C (28 February 2006); doi: 10.1117/12.646346
Show Author Affiliations
Babak Imangholi, Univ. of New Mexico (United States)
Michael P. Hasselbeck, Univ. of New Mexico (United States)
Daniel A. Bender, Univ. of New Mexico (United States)
Chengao Wang, Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, Univ. of New Mexico (United States)
Richard I. Epstein, Los Alamos National Lab. (United States)
Univ. of New Mexico (United States)
Sarah Kurtz, National Renewable Energy Lab. (United States)


Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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