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Proceedings Paper

850 nm asymmetric cladding surface etched DBR lasers with narrow spectral linewidth
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Paper Abstract

Narrow-linewidth (<100 kHz) 850 nm distributed Bragg reflector (DBR) three-section tunable laser diodes are reported. An asymmetric cladding ridge-waveguide structure was used for transverse and lateral mode control. Single longitudinal mode performance was achieved via first-order DBR surface-etched gratings fabricated using inductively-coupled plasma reactive ion etching (ICP-RIE). Epitaxial material with spontaneous emission peak values at 835 nm and 850 nm were used for device fabrication. Stable single-mode powers of up to 30-mW were achieved at 100 mA with spectral side-mode suppression ratio (SMSR) values in excess of 35 dB. Laser tuning by DBR current injection in excess of 7 nm was measured. Narrow spectral linewidths were observed on both sets of devices, with linewidths below 40 kHz for devices with the 835 nm spontaneous emission peak. This is due to the reduced spontaneous emission contribution to the device linewidth. These results demonstrate that extremely narrow linewidths can be achieved using onestep epitaxial growth in an unstrained material system with surface etched first-order gratings on asymmetric cladding ridge-waveguide lasers.

Paper Details

Date Published: 22 February 2006
PDF: 9 pages
Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 613317 (22 February 2006); doi: 10.1117/12.646204
Show Author Affiliations
R. K. Price, Univ. of Illinois at Urbana-Champaign (United States)
V. C. Elarde, Univ. of Illinois at Urbana-Champaign (United States)
J. J. Coleman, Univ. of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 6133:
Novel In-Plane Semiconductor Lasers V
Carmen Mermelstein; David P. Bour, Editor(s)

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