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Proceedings Paper

1.3 μm strained InGaAs quantum well VCSELs: operation characteristics and transverse modes analysis
Author(s): E. Pougeoise; Ph. Gilet; Ph. Grosse; S. Poncet; A. Chelnokov; J.-M. Gérard; G. Bourgeois; R. Stevens; R. Hamelin; M. Hammar; J. Berggren; P. Sundgren
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Paper Abstract

We report results on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs) for optical interconnection applications. The structure was grown by metalorganic vapour-phase epitaxy (MOVPE) and processed as top p-type DBR oxide-confined device. Our VCSELs exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The thermal behaviour of our devices is explained through the threshold current-temperature characteristics. Furthermore, the effective index model is used to understand the modal behaviour.

Paper Details

Date Published: 10 February 2006
PDF: 11 pages
Proc. SPIE 6132, Vertical-Cavity Surface-Emitting Lasers X, 613207 (10 February 2006); doi: 10.1117/12.646140
Show Author Affiliations
E. Pougeoise, CEA-Grenoble/LETI (France)
Ph. Gilet, CEA-Grenoble/LETI (France)
Ph. Grosse, CEA-Grenoble/LETI (France)
S. Poncet, CEA-Grenoble/LETI (France)
A. Chelnokov, CEA-Grenoble/LETI (France)
J.-M. Gérard, CEA-Grenoble/DRFMC (France)
G. Bourgeois, Intexys Photonics (France)
R. Stevens, Intexys Photonics (France)
R. Hamelin, Intexys Photonics (France)
M. Hammar, Royal Institute of Technology (Sweden)
J. Berggren, Royal Institute of Technology (Sweden)
P. Sundgren, Royal Institute of Technology (Sweden)


Published in SPIE Proceedings Vol. 6132:
Vertical-Cavity Surface-Emitting Lasers X
Chun Lei; Kent D. Choquette, Editor(s)

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