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Proceedings Paper

Tunable THz detector based on a grating gated field-effect transistor
Author(s): E. A. Shaner; Mark Lee; M. C. Wanke; A. D. Grine; J. L. Reno; S. J. Allen
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Paper Abstract

A split-grating-gate detector design has been implemented in an effort to combine the tunability of the basic grating-gate detector with the high responsivity observed in these detectors when approaching the pinchoff regime. The redesign of the gates by itself offers several orders of magnitude improvement in resonant responsivity. Further improvements are gained by placing the detector element on a thermally isolating membrane in order to increase the effects of lattice heating on the device response.

Paper Details

Date Published: 7 March 2006
PDF: 9 pages
Proc. SPIE 6120, Terahertz and Gigahertz Electronics and Photonics V, 612006 (7 March 2006); doi: 10.1117/12.646089
Show Author Affiliations
E. A. Shaner, Sandia National Labs. (United States)
Mark Lee, Sandia National Labs. (United States)
M. C. Wanke, Sandia National Labs. (United States)
A. D. Grine, Sandia National Labs. (United States)
J. L. Reno, Sandia National Labs. (United States)
S. J. Allen, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 6120:
Terahertz and Gigahertz Electronics and Photonics V
R. Jennifer Hwu; Kurt J. Linden, Editor(s)

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