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Proceedings Paper

In-line implant and RTP process monitoring using the carrier illumination technique for 65 nm and beyond
Author(s): C. I. Li; H. L. Chuang; P. Y. Chen; C. H. Liu; C. C. Chien; K. T. Huang; S. F. Tzou
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Paper Abstract

This paper describes the application of the Carrier Illumination technique to non-destructively measure dopant behavior before and after annealing for 65nm technology. Patterned wafers were implanted with different SDE energy and dosages. The detected signals from laser diode show good correlation with electrical performance (drive current, overlap capacitance). Another crucial application is to in-line monitor the thermal process. By splitting spike anneal temperature, we found detected signals were proportional to the junction depth of SIMS. The non-destructive, non-contact, and small spot size nature of the CI measurement method is capable of tracing low energy implant and spike anneal.

Paper Details

Date Published: 15 February 2006
PDF: 8 pages
Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 61040T (15 February 2006); doi: 10.1117/12.646050
Show Author Affiliations
C. I. Li, United Microelectronics Corp. (Taiwan)
H. L. Chuang, United Microelectronics Corp. (Taiwan)
P. Y. Chen, United Microelectronics Corp. (Taiwan)
C. H. Liu, United Microelectronics Corp. (Taiwan)
C. C. Chien, United Microelectronics Corp. (Taiwan)
K. T. Huang, United Microelectronics Corp. (Taiwan)
S. F. Tzou, United Microelectronics Corp. (Taiwan)


Published in SPIE Proceedings Vol. 6104:
High-Power Diode Laser Technology and Applications IV
Mark S. Zediker, Editor(s)

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