Share Email Print
cover

Proceedings Paper

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths
Author(s): C. Skierbiszewski; G. Cywiński; M. Siekacz; A. Feduniewicz-Zmuda; L. Nevou; L. Doyennette; M. Tchernycheva; F. H. Julien; J. Smalc; P. Prystawko; M. Kryśko; S. Grzanka; I. Grzegory; J. Z. Domagała; T. Remmele; M. Albrecht; S. Porowski
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report on the 1.5 μm intersubband absorption measured on GaInN multi-quantum wells with AlInN barriers grown by RF plasma assisted molecular beam epitaxy (PAMBE). The intersubband light absorption was demonstrated as a function of the well width (1.3 nm - 3 nm) at the wavelength 1.4μm - 2.5 μm. The use AlInN barriers allowed to achieve strain compensated and crack free structures on GaN substrates. The preformed XRD mapping of a and c lattice constants show that AlInN/GaInN MQWs are fully strained and have up to 7% of indium in the barriers. The replacement of AlGaN by AlInN barriers opens new possibility to grow strain compensated crack free intersubband based devices like electooptical modulators and switches operating at telecommunication wavelengths.

Paper Details

Date Published: 3 March 2006
PDF: 12 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 612109 (3 March 2006); doi: 10.1117/12.646014
Show Author Affiliations
C. Skierbiszewski, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
G. Cywiński, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
M. Siekacz, Institute of High Pressure Physics (Poland)
A. Feduniewicz-Zmuda, TopGaN Ltd. (Poland)
L. Nevou, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
L. Doyennette, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
M. Tchernycheva, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
F. H. Julien, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
J. Smalc, Institute of High Pressure Physics (Poland)
P. Prystawko, Institute of High Pressure Physics (Poland)
M. Kryśko, Institute of High Pressure Physics (Poland)
S. Grzanka, Institute of High Pressure Physics (Poland)
I. Grzegory, Institute of High Pressure Physics (Poland)
J. Z. Domagała, Institute of Physics (Poland)
T. Remmele, Institute for Crystal Growth (Germany)
M. Albrecht, Institute for Crystal Growth (Germany)
S. Porowski, Institute of High Pressure Physics (Poland)


Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

© SPIE. Terms of Use
Back to Top