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Proceedings Paper

Kelvin force microscopy on a (Al1-xGax)0.5In0.5P light-emitting diode
Author(s): Klaus-Dieter Katzer; Wolfgang Mertin; Gerd Bacher; Arndt Jaeger; Klaus Streubel
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Paper Abstract

High-brightness light-emitting diodes (LED) based on AlGaInP combines the possibility to achieve high efficiency with the flexibility of tuning the emission wavelength over a large range of the visible spectrum. For optimizing the device characteristics an accurate determination of the electronic properties, like e. g. the voltage drop across the semiconductor layer sequence, is desirable. We demonstrate the potential of Kelvin Force Microscopy for quantitative investigations of the voltage drop across the heterostructure layers of an operating AlGaInP LED. The surface potential was measured for external biases between -2.0 V and +1.86 V. By subtracting the zero bias result the voltage drop could be extracted quantitatively. In the low voltage regime, most of the voltage drops in the active layer. Above +1.5 V an additional voltage drop occurs on the p-side of the device, i. e. outside the active layer sequence, which reduces the efficiency of the LED. By comparing experimental data with simulations we will discuss possible mechanisms of these findings.

Paper Details

Date Published: 22 February 2006
PDF: 10 pages
Proc. SPIE 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X, 61340I (22 February 2006); doi: 10.1117/12.645768
Show Author Affiliations
Klaus-Dieter Katzer, Univ. Duisburg-Essen (Germany)
Wolfgang Mertin, Univ. Duisburg-Essen (Germany)
Gerd Bacher, Univ. Duisburg-Essen (Germany)
Arndt Jaeger, OSRAM Opto Semiconductors (Germany)
Klaus Streubel, OSRAM Opto Semiconductors (Germany)

Published in SPIE Proceedings Vol. 6134:
Light-Emitting Diodes: Research, Manufacturing, and Applications X
Klaus P. Streubel; H. Walter Yao; E. Fred Schubert, Editor(s)

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