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Proceedings Paper

Probing electrical signals in silicon CMOS devices using electric field induced second harmonic generation
Author(s): Dong Xiao; Euan Ramsay; Bernd Offenbeck; Norbert Weber; Derryck T. Reid
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Paper Abstract

We report the use of electric field induced second harmonic generation to probe electrical signals in a CMOS chip. The second harmonic of incident 2.3μm illumination provided by a femtosecond optical parametric oscillator was measured and shown to depend quadratically on both optical intensity and on the applied DC electric field. By using a near infrared photomultiplier tube it was possible to monitor directly the electrical waveform in the chip on the oscilloscope.

Paper Details

Date Published: 28 February 2006
PDF: 7 pages
Proc. SPIE 6108, Commercial and Biomedical Applications of Ultrafast Lasers VI, 61080H (28 February 2006); doi: 10.1117/12.645640
Show Author Affiliations
Dong Xiao, Heriot-Watt Univ. (United Kingdom)
Euan Ramsay, Heriot-Watt Univ. (United Kingdom)
Bernd Offenbeck, Fraunhofer-Institut für Integrierte Schaltungen (Germany)
Norbert Weber, Fraunhofer-Institut für Integrierte Schaltungen (Germany)
Derryck T. Reid, Heriot-Watt Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 6108:
Commercial and Biomedical Applications of Ultrafast Lasers VI
Joseph Neev; Stefan Nolte; Alexander Heisterkamp; Christopher B. Schaffer, Editor(s)

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