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Proceedings Paper

High-power diode laser arrays emitting at 2 µm with reduced far-field angle
Author(s): Márc T. Kelemen; Marcel Rattunde; Jürgen Weber; Christian Pfahler; Gudrun Kaufel; Rudolf Moritz; Johannes Schmitz; Michael Mikulla; Joachim Wagner
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Paper Abstract

GaSb based diode laser arrays emitting at wavelengths around 2 μm have a significant potential for a variety of applications including material processing, such as welding of transparent plastic materials, and optical pumping of mid-infrared solid state lasers. Even though high output power broad area single emitters and laser arrays have already been demonstrated, they all suffer from a large fast axis beam divergence of typically 67° FWHM due to the broadened waveguide design employed. Here we will present results on (AlGaIn) (AsSb) quantum-well diode laser single emitters and linear arrays consisting of 19 emitters on a 1 cm long bar emitting at around 1.9 μm. To improve on the poor fast axis beam divergence we abandoned the broadened waveguide concept and changed over to a novel waveguide design which features a rather narrow waveguide core. This results in a remarkable reduction in fast axis beam divergence to 44° FWHM for the new waveguide design. For single emitters a cw output power of more than 1.9 W have been observed. 16.9 W in continuous-wave mode at a heat sink temperature of 20 °C have been achieved for arrays. The maximum wall-plug efficiency amounts to 26% both for the single emitters and the laser arrays. These efficiencies are among the highest values reported so far for GaSb based diode lasers, and allow us to use passively cooled and thus less expensive heat sinking technologies.

Paper Details

Date Published: 22 February 2006
PDF: 9 pages
Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 613316 (22 February 2006); doi: 10.1117/12.645603
Show Author Affiliations
Márc T. Kelemen, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Marcel Rattunde, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Jürgen Weber, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Christian Pfahler, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Gudrun Kaufel, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Rudolf Moritz, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Johannes Schmitz, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Michael Mikulla, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Joachim Wagner, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)


Published in SPIE Proceedings Vol. 6133:
Novel In-Plane Semiconductor Lasers V
Carmen Mermelstein; David P. Bour, Editor(s)

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