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Proceedings Paper

Heterogenous integration of InP/InGaAsP photodetectors onto ultracompact silicon-on-insulator waveguide circuits
Author(s): Günther Roelkens; Joost Brouckaert; Dirk Taillaert; Pieter Dumon; Wim Bogaerts; Richard Nötzel; Dries Van Thourhout; Roel Baets
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Paper Abstract

We present the heterogeneous integration of InP/InGaAsP photodetectors onto ultracompact Silicon-on-Insulator (SOI) waveguide circuits using benzocyclobutene (BCB) die to wafer bonding. This technology development enables the integration of a photonic interconnection layer on top of CMOS. Fabrication processes were optimized and the transfer of a passive Silicon-on-Insulator waveguide layer using BCB was assessed.

Paper Details

Date Published: 1 March 2006
PDF: 8 pages
Proc. SPIE 6125, Silicon Photonics, 61250K (1 March 2006); doi: 10.1117/12.645587
Show Author Affiliations
Günther Roelkens, Ghent Univ. (Belgium)
Joost Brouckaert, Ghent Univ. (Belgium)
Dirk Taillaert, Ghent Univ. (Belgium)
Pieter Dumon, Ghent Univ. (Belgium)
Wim Bogaerts, Ghent Univ. (Belgium)
Richard Nötzel, Ghent Univ. (Belgium)
Dries Van Thourhout, Ghent Univ. (Belgium)
Roel Baets, Ghent Univ. (Belgium)

Published in SPIE Proceedings Vol. 6125:
Silicon Photonics
Joel A. Kubby; Graham T. Reed, Editor(s)

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