Share Email Print
cover

Proceedings Paper

High power AlInGaN-based blue-violet laser diodes
Author(s): O. H. Nam; K. H. Ha; H. Y. Ryu; S. N. Lee; T. H. Chang; K. K. Choi; J. K. Son; J. H. Chae; S. H. Chae; H. S. Paek; Y. J. Sung; T. Sakong; H. G. Kim; H. S. Kim; Y. H. Kim; Y. J. Park
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

High power and high efficiency AlInGaN-based laser diodes with 405 nm were fabricated for the post-DVD applications. Magnesium doped AlGaN/GaN multiple quantum barrier (MQB) layers were introduced into the laser diode structure, which resulted in considerable improvement in lasing performances such as threshold current and slope efficiency. Asymmetric waveguide structure was used in order to improve the characteristics of laser diodes. Aluminum content in the n-cladding layer was varied in connection with the vertical beam divergence angle and COD level. By decreasing Al content in the n-cladding layer, the vertical divergence angle was reduced to 17 degree and the COD level was enhanced to over 300mW. The maximum output power reached as high as 470 mW, the highest value ever reported for the narrow-stripe GaN LDs. In addition, the fundamental transverse-mode operation was clearly demonstrated up to 500 mW-pulsed output power.

Paper Details

Date Published: 22 February 2006
PDF: 9 pages
Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330N (22 February 2006); doi: 10.1117/12.645579
Show Author Affiliations
O. H. Nam, Samsung Advanced Institute of Technology (South Korea)
K. H. Ha, Samsung Advanced Institute of Technology (South Korea)
H. Y. Ryu, Samsung Advanced Institute of Technology (South Korea)
S. N. Lee, Samsung Advanced Institute of Technology (South Korea)
T. H. Chang, Samsung Advanced Institute of Technology (South Korea)
K. K. Choi, Samsung Advanced Institute of Technology (South Korea)
J. K. Son, Samsung Advanced Institute of Technology (South Korea)
J. H. Chae, Samsung Advanced Institute of Technology (South Korea)
S. H. Chae, Samsung Advanced Institute of Technology (South Korea)
H. S. Paek, Samsung Advanced Institute of Technology (South Korea)
Y. J. Sung, Samsung Advanced Institute of Technology (South Korea)
T. Sakong, Samsung Advanced Institute of Technology (South Korea)
H. G. Kim, Samsung Advanced Institute of Technology (South Korea)
H. S. Kim, Samsung Advanced Institute of Technology (South Korea)
Y. H. Kim, Samsung Advanced Institute of Technology (South Korea)
Y. J. Park, Samsung Advanced Institute of Technology (South Korea)


Published in SPIE Proceedings Vol. 6133:
Novel In-Plane Semiconductor Lasers V
Carmen Mermelstein; David P. Bour, Editor(s)

© SPIE. Terms of Use
Back to Top