Share Email Print
cover

Proceedings Paper

Novel combined low-coherence interferometry spectrally resolved reflectometry compatible with high-resolution Raman spectroscopy for nondestructive characterization of MEMS structures
Author(s): Wojciech J. Walecki; Talal Azfar; Alexander Pravdivstev; Manuel Santos; Tim Wong; Aiguo Feng; Ann Koo
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We presented novel tool employing both low coherence interferometer, and spectrally resolved reflectometer sensor. We discuss compatibility of this metrology with high resolution Raman spectroscopy. We present measurements of the stability of the Raman spectrometer indicating that system is capable to measure stress in silicon with reproducibility corresponding to 1 MPa and below. We propose integrated tool for simultaneous measurement of stress and displacement of the micro-machined electromechanical devices. Furthermore we propose Raman system configuration allowing measurement of all independent stress tensor components on submicron scale.

Paper Details

Date Published: 6 January 2006
PDF: 7 pages
Proc. SPIE 6111, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS V, 61110M (6 January 2006); doi: 10.1117/12.645560
Show Author Affiliations
Wojciech J. Walecki, Frontier Semiconductor Inc. (United States)
Talal Azfar, Frontier Semiconductor Inc. (United States)
Alexander Pravdivstev, Frontier Semiconductor Inc. (United States)
Manuel Santos, Frontier Semiconductor Inc. (United States)
Tim Wong, Frontier Semiconductor Inc. (United States)
Aiguo Feng, Frontier Semiconductor Inc. (United States)
Ann Koo, Frontier Semiconductor Inc. (United States)


Published in SPIE Proceedings Vol. 6111:
Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS V
Danelle M. Tanner; Rajeshuni Ramesham, Editor(s)

© SPIE. Terms of Use
Back to Top