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Proceedings Paper

Emitting 1530 nm light on Si with optical gain from light emitting layer consisting of Er2O3, P2O5, Yb2O3 nanoparticles and spin-on glass
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Paper Abstract

Emitting 1530 nm light on Silicon wafer is very useful because 1530nm is an important band in optical fiber communication. We explore a new way of light emission at 1530 nm. We demonstrate a simple and non-expensive process to form light-emitting layer. It can be deposited on silicon wafers. The properties of samples can be varied through controlling the composition. The emission efficiency can be further improved by introducing P2O5 and Yb2O3 nanoparticles into the solution. This emitting layer is able to show the signals only within several millimeters due to surface effect of nanoparticles, enabling the higher concentration of Er3+. The optical gain at 1530nm is measured using variable stripe length method. The gain coefficient can be as large as 18 cm-1.

Paper Details

Date Published: 1 March 2006
PDF: 8 pages
Proc. SPIE 6125, Silicon Photonics, 612507 (1 March 2006); doi: 10.1117/12.645505
Show Author Affiliations
Ping-Hung Shih, National Taiwan Univ. (Taiwan)
Kuo-Jui Sun, National Taiwan Univ. (Taiwan)
Yi-Shin Su, National Taiwan Univ. (Taiwan)
Eih-Zhe Liang, National Taiwan Univ. (Taiwan)
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6125:
Silicon Photonics
Joel A. Kubby; Graham T. Reed, Editor(s)

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