Share Email Print

Proceedings Paper

An investigation into changes observed in the oscillation characteristics of semiconductor lasers exposed to magnetic fields
Author(s): T. Miyamoto; J. Chiba; T. Sato; M. Ohkawa; T. Maruyama
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The application of magnetic fields to semiconductor lasers gives rise to significant alterations in their oscillation wavelengths. Reports dating back to the 1960's describe shifts to shorter oscillation wavelengths, at extremely low temperatures (80K) and strong magnetic fields (~4T). These shifts were explained by the effect of the Landau Level. In our preliminary experiments, we exposed bulk-type semiconductor lasers oscillating at 780nm to a relatively weak magnetic field (1.4T), at room temperature (300K), observing, in the process, that the oscillation wavelength shifted to the longer (low-frequency) side. This work looks at the longer side shift, the optical output-power shift on the low-power side, and the terminal-voltage shift seen on the higher voltage side of some multi-quantum-well (MQW) laser diodes oscillating at 780nm, under the same experimental conditions we employed in previous works. In discussions of shift mechanisms, we consider how wavelength (frequency), optical output-power, and terminal voltage-shifts are correlated. Our expanded knowledge base has forced a complete rethink of the mechanisms we relied upon in the 1960's. Current evidence suggests that the temperature rise and the longitudinal magneto-resistance effect were "co-conspirators" in the shifts observed in our experiments, when we applied magnetic fields to laser diodes parallel to the injection current. In an upcoming report, we will describe the results of experiments conducted near the threshold current.

Paper Details

Date Published: 28 February 2006
PDF: 8 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61150Z (28 February 2006); doi: 10.1117/12.645485
Show Author Affiliations
T. Miyamoto, Niigata Univ. (Japan)
J. Chiba, Niigata Univ. (Japan)
T. Sato, Niigata Univ. (Japan)
M. Ohkawa, Niigata Univ. (Japan)
T. Maruyama, Niigata Univ. (Japan)

Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top