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Proceedings Paper

Nitrogen-doped TiO2 thin films grown on various substrates
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Paper Abstract

We demonstrate the effect of N-doping in various phases, where N-doped states, bandgap shifts, and photocatalytic efficiencies are determined. The N-doped TiO2 films were grown by pulsed-laser deposition using TiON targets. The crystal structures were analyzed using x-ray diffraction and Raman spectroscopy. The crystalline phases of TiO2 were artificially controlled by choosing appropriate substrates. The anatase and rutile were epitaxially grown on (100) LaAlO3 and (001) sapphire substrates. Rutile-anatase mixtured phase were grown on soda lime glass substrates. We here note that N-concentration strongly depends on the growth temperature, so that we kept the growth temperature at 300 °C in order to fix the N concentrations for respective specimens. Chemical bonding states of N within the matrix were investigated by x-ray photoelectron spectroscopy. The optical absorption and bandgap were measured using UV-VIS spectrometer. The photocatalytic activity of the films was evaluted by measuring the decompositon rate of methylene blue solution with the visible light illumination.

Paper Details

Date Published: 1 March 2006
PDF: 8 pages
Proc. SPIE 6106, Photon Processing in Microelectronics and Photonics V, 610615 (1 March 2006); doi: 10.1117/12.645433
Show Author Affiliations
Tatsunori Sakano, Keio Univ. (Japan)
Takeshi Okato, Keio Univ. (Japan)
Minoru Obara, Keio Univ. (Japan)


Published in SPIE Proceedings Vol. 6106:
Photon Processing in Microelectronics and Photonics V
David B. Geohegan; Frank Träger; Jan J. Dubowski; Tatsuo Okada; Craig B. Arnold; Michel Meunier; Andrew S. Holmes, Editor(s)

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