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Proceedings Paper

Quantum-structure dependent excitonic carrier dynamics of InxGa1-xN/GaN multi-quantum-wells
Author(s): Sangsu Hong; Yong Seok Kim; Young Joon Yoon; June Sik Park; Bae Kyun Kim; Alexander Fomin; Gyu Han Lee; Je Won Kim; Hyung Koun Cho; Taiha Joo
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Paper Abstract

Excitonic carrier dynamics taking place in InxGa1-xN/GaN multi-quantum-well systems have been studied by low temperature picosecond time resolved photoluminescence (LT-TRPL), HR-TEM, XPS, Dynamic TOF-SIMS, and quantum mechanical simulation methods. Both time-integrated and time-resolved photoluminescence spectra of InxGa1-xN/GaN multi-quantum-wells with different well thickness and Indium composition were measured at 10 K. We assigned the natural radiative lifetime of each sample from the time resolved PL. We observed that the natural radiative lifetime of In InxGa1-xN/GaN multi-quantum-wells depends strongly on the well thickness and Indium composition. To support the measured natural radiative lifetimes, excitonic oscillator strengths of the InxGa1-xN/GaN multi-quantumwells were calculated by using a 2-D particle-in-a-box model as functions of well thickness and Indium composition. Values of the well thickness and Indium compositions from the HR-TEM and XPS compositional depth profiling were used to achieve more realistic computational results and to corroborate the measured natural radiative lifetimes of InxGa1-xN/GaN multi-quantum wells.

Paper Details

Date Published: 3 March 2006
PDF: 8 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 612105 (3 March 2006); doi: 10.1117/12.645432
Show Author Affiliations
Sangsu Hong, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Yong Seok Kim, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Young Joon Yoon, Samsung Electro-Mechanics Co., Ltd. (South Korea)
June Sik Park, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Bae Kyun Kim, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Alexander Fomin, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Gyu Han Lee, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Je Won Kim, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Hyung Koun Cho, Sungkyunkwan Univ. (South Korea)
Taiha Joo, Pohang Univ. of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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