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Proceedings Paper

Photoluminescence refrigeration in semiconductors
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Paper Abstract

A theoretical study of photoluminescence refrigeration in semiconductors has been carried out using a model that takes into account photon recycling and includes the rate equations for both carriers and photons. General expressions for cooling efficiency, cooling power density, and the cooling condition are derived. The investigation of the photoluminescence refrigeration in an intrinsic GaAs slab shows that net cooling is accessible when quantum efficiency and luminescence extraction are high, and that photon recycling contributes strongly to photoluminescence refrigeration when the luminescence extraction efficiency is small.

Paper Details

Date Published: 28 February 2006
PDF: 9 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61152C (28 February 2006); doi: 10.1117/12.645359
Show Author Affiliations
J.-B. Wang, Arizona State Univ. (United States)
S. R. Johnson, Arizona State Univ. (United States)
D. Ding, Arizona State Univ. (United States)
S.-Q. Yu, Arizona State Univ. (United States)
Y.-H. Zhang, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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