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Proceedings Paper

Synthesis and characterization of (Zn,Mg)O:P/ZnO heterostructures
Author(s): Yuanjie Li; J. M. Erie; H. S. Kim; S. J. Pearton; D. P. Norton; J. J. Chen; F. Ren
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Paper Abstract

Zn0.9Mg0.1O/ZnO heterostructures were grown on both sapphire and bulk ZnO substrates via pulsed laser deposition (PLD). Electron-beam deposited 100nm Au and Ti/Au (20nm/80nm) were used as the p-Ohmic contact and n-Ohmic contact, respectively. Post-annealing at above 450°C of the contacts showed improved ohmic characteristics. I-V dependences showed good rectifying diode-like behaviors with threshold voltage of 1.36V and 2.16V for the devices fabricated on sapphire and ZnO substrates, respectively. 0.01at%Al-doped n-ZnO (n ~1019 cm-3) was deposited on MgO buffer layer via PLD. The electrical and optical properties strongly depend on the growth temperature, working pressure and laser energy. Room temperature photoluminescence showed band edge emission at ~377nm with very low deep level emission. The intensity of the band edge emission increased with growth temperature and deposition laser energy. Atomic force microscopy (AFM) results also showed that the root-mean-square (RMS) roughness increases with growth temperature and oxygen partial pressure. The full-width-at-half maximum (FWHM) for the ZnO (0002) peak is of 0.26-0.64°.

Paper Details

Date Published: 2 March 2006
PDF: 10 pages
Proc. SPIE 6122, Zinc Oxide Materials and Devices, 61220R (2 March 2006); doi: 10.1117/12.645105
Show Author Affiliations
Yuanjie Li, Univ. of Florida (United States)
J. M. Erie, Univ. of Florida (United States)
H. S. Kim, Univ. of Florida (United States)
S. J. Pearton, Univ. of Florida (United States)
D. P. Norton, Univ. of Florida (United States)
J. J. Chen, Univ. of Florida (United States)
F. Ren, Univ. of Florida (United States)

Published in SPIE Proceedings Vol. 6122:
Zinc Oxide Materials and Devices
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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