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Proceedings Paper

Advances in laser cooling of semiconductors
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Paper Abstract

Laser cooling in semiconductor structures due to anti-Stokes luminescence is reviewed. Theoretical background considering luminescence trapping and red-shifting, the effect of free carrier and back-ground absorption, Pauli band-blocking, and the temperature-dependence of various recombination mechanisms are discussed. Recent experimental results demonstrating record external quantum efficiencies (EQE) in GaAs/GaInP heterostructures are described, and conditions favorable for the first observation of laser cooling in semiconductors are discussed.

Paper Details

Date Published: 28 February 2006
PDF: 13 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611518 (28 February 2006); doi: 10.1117/12.644915
Show Author Affiliations
M. Sheik-Bahae, Univ. of New Mexico (United States)
B. Imangholi, Univ. of New Mexico (United States)
M. P. Hasselbeck, Univ. of New Mexico (United States)
R. I. Epstein, Univ. of New Mexico (United States)
Los Alamos National Labs. (United States)
S. Kurtz, National Renewable Energy Lab. (United States)


Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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