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Proceedings Paper

Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells
Author(s): S. K. Ray; K. M. Groom; M. D. Beattie; H. Y. Liu; M. Hopkinson; R. A. Hogg
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Paper Abstract

We discuss a technique for tailoring the emission bandwidth of a quantum dot (QD) superluminescent light emitting diode (SLED). We utilize a multi-dot-in-well (DWELL) structure with different indium compositions within each well which we term dots in compositionally modulated well (DCMWELL) structures. One key aspect of our design is the overlap of the ground and excited state emission of different DWELL layers. Such SLED devices operate CW at room temperature with powers in excess of 2.5mW per facet, and exhibit a single peak almost 85 nm wide, which is almost flat topped.

Paper Details

Date Published: 7 February 2006
PDF: 6 pages
Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 612907 (7 February 2006); doi: 10.1117/12.644799
Show Author Affiliations
S. K. Ray, Univ. of Sheffield (United Kingdom)
K. M. Groom, Univ. of Sheffield (United Kingdom)
M. D. Beattie, Univ. of Sheffield (United Kingdom)
H. Y. Liu, Univ. of Sheffield (United Kingdom)
M. Hopkinson, Univ. of Sheffield (United Kingdom)
R. A. Hogg, Univ. of Sheffield (United Kingdom)

Published in SPIE Proceedings Vol. 6129:
Quantum Dots, Particles, and Nanoclusters III
Kurt G. Eyink; Diana L. Huffaker, Editor(s)

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