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Proceedings Paper

Size, areal density and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy
Author(s): J. C.-C. Lin; R. A. Hogg; M. Hopkinson; P. W. Fry; I. M. Ross; A. G. Cullis; R. S. Kolodka; A. I. Tartakovskii; M. S. Skolnick
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Paper Abstract

We report the selective area molecular beam epitaxial (SAMBE) growth of quantum dot (QD) structures. The formation of polycrystalline deposits on dielectric masks is shown to be controlled by the growth rate and growth temperature. Furthermore, we report the size, areal density and energy control of QDs in the region of the dielectric mask. We show that for SAMBE, a reduction in InAs QD size and areal density is obtained close to a polycrstal covered dielectric mask, and that this effect is dependent upon the amount of polycrystalline GaAs coverage of the mask. We attribute this effect to the transport of indium from neighboring epitaxial areas to the polycrystalline GaAs covered mask.

Paper Details

Date Published: 7 February 2006
PDF: 9 pages
Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 61290G (7 February 2006); doi: 10.1117/12.644792
Show Author Affiliations
J. C.-C. Lin, Univ. of Sheffield (United Kingdom)
R. A. Hogg, Univ. of Sheffield (United Kingdom)
M. Hopkinson, Univ. of Sheffield (United Kingdom)
P. W. Fry, Univ. of Sheffield (United Kingdom)
I. M. Ross, Univ. of Sheffield (United Kingdom)
A. G. Cullis, Univ. of Sheffield (United Kingdom)
R. S. Kolodka, Univ. of Sheffield (United Kingdom)
A. I. Tartakovskii, Univ. of Sheffield (United Kingdom)
M. S. Skolnick, Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 6129:
Quantum Dots, Particles, and Nanoclusters III
Kurt G. Eyink; Diana L. Huffaker, Editor(s)

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