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Proceedings Paper

Highly reliable 75W InGaAs/AlGaAs laser bars with over 70% conversion efficiency
Author(s): Götz Erbert; Frank Bugge; Andrea Knigge; Ralf Staske; Bernd Sumpf; Hans Wenzel; Günther Tränkle
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Paper Abstract

Diode lasers with a high very conversion efficiency can be obtained when carefully taken into account several partly opposed requirements for the design of the layer structure. Results are given for 940nm laser structures based on the well established InGaAs/AlGaAs material with a relatively low vertical divergence of about 45° including 95% of optical power. Laser bars were processed and mounted on passively cooled heat sinks. 73% conversion efficiency was achieved at 70W output power. 150μm stripe lasers with only 1500μm resonator length mounted on usual C-mounts have a thermal rollover of about 18W, which is a record high value for a resonator length below 2mm. Reliability tests show an excellent stability at 75W in CW and 95W in long pulse operation mode over about 10000h test time.

Paper Details

Date Published: 22 February 2006
PDF: 13 pages
Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330B (22 February 2006); doi: 10.1117/12.644718
Show Author Affiliations
Götz Erbert, Ferdinand-Braun-Institut (Germany)
Frank Bugge, Ferdinand-Braun-Institut (Germany)
Andrea Knigge, Ferdinand-Braun-Institut (Germany)
Ralf Staske, Ferdinand-Braun-Institut (Germany)
Bernd Sumpf, Ferdinand-Braun-Institut (Germany)
Hans Wenzel, Ferdinand-Braun-Institut (Germany)
Günther Tränkle, Ferdinand-Braun-Institut (Germany)


Published in SPIE Proceedings Vol. 6133:
Novel In-Plane Semiconductor Lasers V
Carmen Mermelstein; David P. Bour, Editor(s)

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