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Proceedings Paper

Analysis of the static and dynamic characteristics of 1310 nm vertical-cavity surface-emitting lasers
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Paper Abstract

We present the static and dynamic simulation of a long-wavelength vertical-cavity surface-emitting laser (VCSEL) operating at around 1310 nm. The device consists of AlGaAs/GaAs distributed Bragg reflectors (DBRs) which are wafer-fused to both sides of the InP-based cavity with InAlGaAs quantum wells. A tunnel junction is used for current injection into the active region. The structure is simulated with a modified version of the commercial device simulator Synopsys Sentaurus Device. The fully-coupled two-dimensional electro-opto-thermal simulations use a microscopic physics-based model. Carrier transport is described by the continuity and Poisson equations and self-heating effects are accounted for by a thermodynamic equation. To obtain the opticalmodes, the wave equation is solved using a finite element approach. The optical gain model includes many-body effects. The equations are solved self-consistently. Calibrations of static (L-I, V-I curves) and dynamic characteristics (RIN) show good agreement with measurements at different temperatures. On this basis, the simulations reveal the critical factors that determine the modulation-current efficiency factor (MCEF) of the device.

Paper Details

Date Published: 28 February 2006
PDF: 9 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611512 (28 February 2006); doi: 10.1117/12.644712
Show Author Affiliations
Alexandra Bäcker, ETH Zürich (Switzerland)
Stefan Odermatt, ETH Zürich (Switzerland)
Friedhard Römer, ETH Zürich (Switzerland)
Matthias Streiff, Sensirion AG (Switzerland)
Bernd Witzigmann, ETH Zürich (Switzerland)


Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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