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Proceedings Paper

Polarization dependent size of Ge nanoparticle formed by ultrafast laser
Author(s): Min Ah Seo; Dai Sik Kim; Hyun Sun Kim; Sae Chae Jeoung
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Paper Abstract

We present that size of Ge nanoparticle can be controlled by changing the angle between ultrafast laser polarization and crystal axis using ultrafast laser irradiation. The nanoparticle size dependence on the laser polarization with respect to the Ge crystal axis exhibits a sinusoidal function with a minimum size at (100) axis. Moreover, the measurement of transient reflection reveals the presence of large anisotropies in both its amplitude and its relaxation dynamics with a minimum at (100) crystal axis. This implies that the observed anisotropic dependence of nanostructure size of Ge is followed by a different carrier density as well as its relaxation process depending on the orientation of Ge crystal axis only at near and above threshold fluence.

Paper Details

Date Published: 7 February 2006
PDF: 8 pages
Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 61290F (7 February 2006); doi: 10.1117/12.644519
Show Author Affiliations
Min Ah Seo, Seoul National Univ. (South Korea)
Dai Sik Kim, Seoul National Univ. (South Korea)
Hyun Sun Kim, Korea Research Institute of Standards and Science (South Korea)
Sae Chae Jeoung, Korea Research Institute of Standards and Science (South Korea)


Published in SPIE Proceedings Vol. 6129:
Quantum Dots, Particles, and Nanoclusters III
Kurt G. Eyink; Diana L. Huffaker, Editor(s)

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