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Proceedings Paper

Light emission from an ambipolar semiconducting polymer field-effect transistor
Author(s): James S. Swensen; Cesare Soci; Alan J. Heeger
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Paper Abstract

Ambipolar light-emitting field-effect transistors are fabricated with two different metals for the top-contact source and drain electrodes; a low-work-function metal defining the channel for the source electrode and a high-work-function metal defining the channel for the drain electrode. A thin film of polypropylene-co-1-butene on SiNx is used as the gate dielectric on an n++-Si wafer, which functioned as the substrate and the gate electrode. Transport data show ambipolar behavior. Recombination of electrons and holes results in a narrow zone of light emission within the channel. The location of the emission zone is controlled by the gate bias.

Paper Details

Date Published: 23 February 2006
PDF: 8 pages
Proc. SPIE 6117, Organic Photonic Materials and Devices VIII, 61170R (23 February 2006); doi: 10.1117/12.644204
Show Author Affiliations
James S. Swensen, Univ. of California, Santa Barbara (United States)
Cesare Soci, Univ. of California, Santa Barbara (United States)
Alan J. Heeger, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 6117:
Organic Photonic Materials and Devices VIII
James G. Grote; Francois Kajzar; Nakjoong Kim, Editor(s)

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