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Proceedings Paper

Low-cost 7 mW CW 355-nm diode-pumped intracavity frequency-tripled microchip laser
Author(s): Nicolas Aubert; Thierry Georges; Corinne Chauzat; Raymond Le Bras; Patrice Féron
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Paper Abstract

Low noise CW milliWatt scale UV lasers are needed for many analysis applications in the semiconductor and the biological fields. Intracavity tripling has been widely used to improve the UV output power of Q-switched or modelocked lasers, but no efficient diode-pumped CW UV laser was ever reported. One of the key to success is the use of a monolithic laser structure which both eliminates the birefringence interference issue and facilitates the single frequency operation. The monolithic structure is obtained by optically contacting crystals. It does not require any alignment, reduces the manufacturing cost and improves reliability. The optimization of the amplifying medium and doubling and tripling crystals involves as many parameters as pump absorption, thermal lens, cavity length, 1064 nm mode size, walk-off, acceptance angles, polarizations, phases... The interplay between these parameters will be discussed. Finally, several amplifying media (Nd:YAG and Nd:YVO4), doubling crystals (KTP, KNbO3, BBO, BiBO and LBO) and tripling crystals (BBO, BiBO, LBO) were tested. With a 2.4W 808 nm diode pump, several configurations have led to low noise 355 nm single frequency operation exceeding 5 mW. We believe that this power can still be improved.

Paper Details

Date Published: 28 February 2006
PDF: 7 pages
Proc. SPIE 6100, Solid State Lasers XV: Technology and Devices, 610008 (28 February 2006); doi: 10.1117/12.644165
Show Author Affiliations
Nicolas Aubert, Oxxius SA (France)
Thierry Georges, Oxxius SA (France)
Corinne Chauzat, Oxxius SA (France)
Raymond Le Bras, Oxxius SA (France)
Patrice Féron, ENSSAT (France)


Published in SPIE Proceedings Vol. 6100:
Solid State Lasers XV: Technology and Devices
Hanna J. Hoffman; Ramesh K. Shori, Editor(s)

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