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Proceedings Paper

Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission
Author(s): J. Lloyd-Hughes; E. Castro-Camus; M. D. Fraser; H. H. Tan; C. Jagadish; M. B. Johnston
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Paper Abstract

We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with arsenic ions, and InGaAs and InP with Fe+ iron ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation to model the emission process. The simulation accurately predicts the experimentally observed bandwidth increase, without resorting to any fitting parameters. Additionally, we discuss intervalley scattering, the influence of space-charge fields, and the relative performance of InP, GaAs and InAs based photoconductive emitters.

Paper Details

Date Published: 15 February 2006
PDF: 11 pages
Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180K (15 February 2006); doi: 10.1117/12.644074
Show Author Affiliations
J. Lloyd-Hughes, Univ. of Oxford (United Kingdom)
E. Castro-Camus, Univ. of Oxford (United Kingdom)
M. D. Fraser, The Australian National Univ. (Australia)
H. H. Tan, The Australian National Univ. (Australia)
C. Jagadish, The Australian National Univ. (Australia)
M. B. Johnston, Univ. of Oxford (United Kingdom)

Published in SPIE Proceedings Vol. 6118:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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