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Proceedings Paper

InP-based monolithically integrated optical gain-competition inverter
Author(s): A. Y. Hsu; G. A. Vawter; E. S. Skogen; G. Peake; K. Baucom; R. J. Shul; C. Alford; B. Salters; F. Cajas; W. W. Chow
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Paper Abstract

Monolithically-integrated optical gain-competition inverters are demonstrated at 1.55 μm in the InGaAsP/InP material system. The optical inverters consist of etched-facet slave lasers that are side-injected with tapered etchedfacet master lasers. Single-input optical inverters show improved quenching contrast for devices with larger taper width with respect to the slave laser length. Inverter performance also shows a dependence on the ridge width and lasing modes of the slave laser. Two-input optical inverters are characterized which demonstrate NAND and NOR logic operation at different slave laser currents.

Paper Details

Date Published: 3 March 2006
PDF: 7 pages
Proc. SPIE 6124, Optoelectronic Integrated Circuits VIII, 612418 (3 March 2006); doi: 10.1117/12.643995
Show Author Affiliations
A. Y. Hsu, Sandia National Labs. (United States)
G. A. Vawter, Sandia National Labs. (United States)
E. S. Skogen, Sandia National Labs. (United States)
G. Peake, Sandia National Labs. (United States)
K. Baucom, Sandia National Labs. (United States)
R. J. Shul, Sandia National Labs. (United States)
C. Alford, L&M Technologies, Inc. (United States)
B. Salters, L&M Technologies, Inc. (United States)
F. Cajas, The Plus Group (United States)
W. W. Chow, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 6124:
Optoelectronic Integrated Circuits VIII
Louay A. Eldada; El-Hang Lee, Editor(s)

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