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Proceedings Paper

2 W continuous wave operation of optically pumped blue VECSEL with frequency doubling
Author(s): Taek Kim; Jaeryung Yoo; Kisung Kim; Sangmoon Lee; Seongjin Lim; Gibum Kim; Junyoun Kim; Soohaeng Cho; Junho Lee; Yongjo Park
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Paper Abstract

We have optimized a resonant gain structure of a 920 nm vertical external cavity surface emitting laser. We found that a long saturated carrier lifetime in shallow quantum well (QW) under a high injection level restricts the laser performance. An insertion of non-absorbing laser in the middle of barrier layers with multi QWs is effective to reduce the saturated carrier lifetime and, therefore, to enhance the laser performance. With the optimized laser structure, which has 10 periods of triple In0.09Ga0.91 As QWs located at the anti-standing wave optical field with Al0.3Ga0.7As non-absorbing layers in the middle of GaAs barrier, we achieved 4.9 W operation at 920nm. Subsequently blue laser was achieved by employing an intra-cavity frequency doubling crystal LBO. As a result, we demonstrated 2 W single transverse mode operation in blue (460 nm) with a 20 W pump laser power. The conversion efficiency from 808 nm pump laser to the blue laser is measured to be 10 %.

Paper Details

Date Published: 10 February 2006
PDF: 7 pages
Proc. SPIE 6132, Vertical-Cavity Surface-Emitting Lasers X, 61320K (10 February 2006); doi: 10.1117/12.642451
Show Author Affiliations
Taek Kim, Samsung Advanced Institute of Technology (South Korea)
Jaeryung Yoo, Samsung Advanced Institute of Technology (South Korea)
Kisung Kim, Samsung Advanced Institute of Technology (South Korea)
Sangmoon Lee, Samsung Advanced Institute of Technology (South Korea)
Seongjin Lim, Samsung Advanced Institute of Technology (South Korea)
Gibum Kim, Samsung Advanced Institute of Technology (South Korea)
Junyoun Kim, Samsung Advanced Institute of Technology (South Korea)
Soohaeng Cho, Samsung Advanced Institute of Technology (South Korea)
Junho Lee, Samsung Advanced Institute of Technology (South Korea)
Yongjo Park, Samsung Advanced Institute of Technology (South Korea)


Published in SPIE Proceedings Vol. 6132:
Vertical-Cavity Surface-Emitting Lasers X
Chun Lei; Kent D. Choquette, Editor(s)

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