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Proceedings Paper

End-pumped vertical external cavity surface emitting laser
Author(s): Taek Kim; Junho Lee; Sangmoon Lee; Jaeryung Yoo; Kisung Kim; Junyoun Kim; Soohaeng Cho; Seongjin Lim; Gibum Kim; Yongjo Park
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Paper Abstract

We report on a 1060 nm single transverse mode operation of an end-pumped vertical external cavity surface emitting laser (VECSEL). End-pumping scheme is enabled by capillary bonding of a VECSEL chip with a diamond heat spreader followed by a GaAs substrate removal by selective wet etching. The VECSEL structure is consisted of 10 periods of resonant periodic gain with an 8 nm InGaAs single quantum well at the antinodes of the standing wave optical field and a 35 pair AlAs/AlGaAs bottom distributed Brag reflector (DBR). Optical pump efficiency through the bottom mirror is enhanced by a modified DBR structure with a reduced reflectance in 808 nm pump wavelength region. A low threshold pump density of 433 W/cm2 and over 45 W/W optical to optical conversion efficiency are achieved with reflectivity of 94 % output coupler at the heat spreader temperature of 20°C. The laser operates in a circular TEM00 mode (M2<1.5) up to 7 W, and maximum power of 9.1 W is limited by our pump laser power.

Paper Details

Date Published: 10 February 2006
PDF: 5 pages
Proc. SPIE 6132, Vertical-Cavity Surface-Emitting Lasers X, 61320D (10 February 2006); doi: 10.1117/12.641988
Show Author Affiliations
Taek Kim, Samsung Advanced Institute of Technology (South Korea)
Junho Lee, Samsung Advanced Institute of Technology (South Korea)
Sangmoon Lee, Samsung Advanced Institute of Technology (South Korea)
Jaeryung Yoo, Samsung Advanced Institute of Technology (South Korea)
Kisung Kim, Samsung Advanced Institute of Technology (South Korea)
Junyoun Kim, Samsung Advanced Institute of Technology (South Korea)
Soohaeng Cho, Samsung Advanced Institute of Technology (South Korea)
Seongjin Lim, Samsung Advanced Institute of Technology (South Korea)
Gibum Kim, Samsung Advanced Institute of Technology (South Korea)
Yongjo Park, Samsung Advanced Institute of Technology (South Korea)


Published in SPIE Proceedings Vol. 6132:
Vertical-Cavity Surface-Emitting Lasers X
Chun Lei; Kent D. Choquette, Editor(s)

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