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Proceedings Paper

Quantum dot photonic crystal detectors
Author(s): Kalyan Teja Posani; Vaibhav Tripathi; Senthil Annamalai; Sanjay Krishna; Raviv Perahia; Orion Crisafulli; Oskar Painter
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Paper Abstract

In this paper we report the use of a photonic crystal resonant cavity to increase the quantum efficiency, detectivity (D*) and the background limited infrared photodetector (BLIP) temperature of a quantum dot detector. The photonic crystal is incorporated in InAs/InGaAs/GaAs dots-in-well (DWELL) detector using Electron beam lithography. From calibrated blackbody measurements, the conversion efficiency of the detector with the photonic crystal (DWELL-PC) is found to be 58.5% at -2.5 V while the control DWELL detectors have quantum efficiency of 7.6% at the same bias. We observed no significant reduction in the dark current of the photonic crystal devices compared to the normal structure. The generation-recombination limited D* at 77K with a 300K F1.7 background, is estimated to be 6 x 1010 cmHz1/2/W at -3V bias for the DWELL-PC which is a factor of 20 higher than that of the control sample. We also observed a 20% increase in the BLIP temperature for the DWELL-PCs.

Paper Details

Date Published: 7 February 2006
PDF: 8 pages
Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 612906 (7 February 2006); doi: 10.1117/12.641750
Show Author Affiliations
Kalyan Teja Posani, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
Vaibhav Tripathi, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
Senthil Annamalai, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
Sanjay Krishna, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
Raviv Perahia, California Institute of Technology (United States)
Orion Crisafulli, California Institute of Technology (United States)
Oskar Painter, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 6129:
Quantum Dots, Particles, and Nanoclusters III
Kurt G. Eyink; Diana L. Huffaker, Editor(s)

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