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Beyond the ABC: carrier recombination in semiconductor lasers
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Paper Abstract

It is demonstrated that fully microscopic many-body models are required for a correct description of the dominant carrier loss processes in semiconductor lasers, spontaneous emission and Auger recombination, and that they are able to quantitatively predict these losses. The density dependence of the losses assumed in semi-empirical approaches, J=AN+BN2+CN3, is shown to break down already near transparency. For the spontaneous emission it is shown to decrease from quadratic to linear (BN), Auger rates are shown to increase only quadratically (CN2) or even less.

Paper Details

Date Published: 28 February 2006
PDF: 7 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151T (28 February 2006); doi: 10.1117/12.641744
Show Author Affiliations
J. Hader, Univ. of Arizona (United States)
J. V. Moloney, Univ. of Arizona (United States)
S. W. Koch, Philipps-Univ. Marburg (Germany)

Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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