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Proceedings Paper

High performance 1.3µm quantum dot lasers on GaAs and Silicon
Author(s): P. Bhattacharya; Z. Mi; J. Yang; S. Fathpour
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Paper Abstract

We have investigated the molecular beam epitaxial growth and characteristics of self-organized In(Ga)As quantum dot lasers grown on GaAs and silicon. Utilizing the techniques of tunnel injection and acceptor-doping of quantum dots, we have achieved high performance 1.3 μm InAs quantum dot lasers on GaAs, which exhibit Jth=180 A/cm2, T0=∞, dg/dn≈1×10-14 cm2, f-3dB=11 GHz, chirp of 0.1 Å and zero α-parameter. Utilizing thin (⩽ 2 μm) GaAs buffer layers and quantum dots as dislocation filters, we have demonstrated room-temperature operational In0.5Ga0.5As quantum dot lasers grown directly on silicon, which are characterized by relatively low threshold current (Jth ~ 900 A/cm2), high output power (> 150 mW), large characteristic temperature (T0 = 244 K) and constant output slope efficiency (⩾ 0.3 W/A) in the temperature range of 5 to 95 °C.

Paper Details

Date Published: 22 February 2006
PDF: 9 pages
Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330U (22 February 2006); doi: 10.1117/12.641472
Show Author Affiliations
P. Bhattacharya, Univ. of Michigan (United States)
Z. Mi, Univ. of Michigan (United States)
J. Yang, Univ. of Michigan (United States)
S. Fathpour, Univ. of California, Los Angeles (United States)


Published in SPIE Proceedings Vol. 6133:
Novel In-Plane Semiconductor Lasers V
Carmen Mermelstein; David P. Bour, Editor(s)

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